Laser processing method

ABSTRACT

In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

TECHNICAL FIELD

The present invention relates to a laser processing method.

BACKGROUND ART

Known as an example of conventional laser processing methods is onecomprising converging a laser light at a silicon monocrystal substrate(object) so as to form a material modified part (modified region) andthen etching the silicon monocrystal substrate so as to remove thematerial modified part, thereby forming a blind hole or through hole inthe silicon monocrystal substrate as disclosed in Patent Literature 1.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Application Laid-Open No.2005-74663

SUMMARY OF INVENTION Technical Problem

While the above-mentioned laser processing methods have been advancingtheir application to various fields, those which can accurately form aobject to be processed with a space such as a hole extending in adirection tilted with respect to the thickness direction of the object(which may simply be referred to as “tilted direction” hereinafter) havebeen in demand in order to improve the degree of freedom in designing,for example.

It is therefore an object of the present invention to provide a laserprocessing method which can accurately form an object to be processedwith a space (hole) extending in a direction tilted with respect to thethickness direction of the object.

Solution to Problem

For achieving the above-mentioned object, the laser processing method inaccordance with one aspect of the present invention comprises a modifiedregion forming step of converging a laser light at a sheet-like objectto be processed made of silicon so as to form a plurality of modifiedspots within the object along a modified region forming line tilted in afirst lateral direction with respect to a thickness direction of theobject and the plurality of modified spots construct a modified region,and an etching step of anisotropically etching the object after themodified region forming step so as to advance the etching selectivelyalong the modified region and form the object with a space extendingobliquely with respect to the thickness direction, wherein the modifiedregion forming step forms the plurality of modified spots such that themodified spots adjacent to each other at least partly overlap each otherwhen seen in the first lateral direction.

This laser processing method performs anisotropic etching and thus cancontrol the advancement of etching by utilizing the characteristicfeature that the etching rate depends on the crystal orientation of theobject. Since the modified spots adjacent to each other at least partlyoverlap each other when seen in the first lateral direction in themodified region, a plurality of modified spots or fractures extendingtherefrom can favorably be joined to each other. Therefore, theselective etching of the modified region can favorably be advancedwithout interruption even when proceeding along a direction tilted withrespect to the thickness direction. This can accurately remove the partcorresponding to the space in the object, whereby the space can beformed precisely in the object.

For favorably achieving the operation and effect mentioned above, themodified region forming step may specifically comprise a step of forminga plurality of modified spots along the line while shifting the modifiedspots in the thickness direction such that the modified spots adjacentto each other partly overlap each other when seen in the first lateraldirection. Here, there is a case where the modified region forming stepirradiates the object with the laser light while moving a convergingpoint of the laser light along a second lateral direction orthogonal tothe first lateral direction.

For favorably achieving the operation and effect mentioned above, themodified region forming step may specifically comprise a step of forminga plurality of modified spot groups, each including two or more modifiedspots continuously aligning along the first lateral direction, along theline while shifting the modified spot groups in the first lateraldirection such that a pair of modified spot groups adjacent to eachother partly overlap each other when seen in the thickness direction.Here, there is a case where the modified region forming step irradiatesthe object with the laser light while moving the converging point of thelaser light along the first lateral direction.

The modified region forming step may comprise a first step of forming aplurality of modified spots along the line while shifting the modifiedspots in the thickness direction such that the modified spots adjacentto each other partly overlap each other when seen in the first lateraldirection and a second step of forming a plurality of modified spotgroups, each including two or more modified spots continuously aligningalong the first lateral direction, along the line while shifting themodified spot groups in the first lateral direction such that a pair ofmodified spot groups adjacent to each other partly overlap each otherwhen seen in the thickness direction. In this case, appropriatelyperforming the first and second steps in the modified region formingstep can control the advancement of etching in the etching step, so asto adjust the size of the resulting hole. This is because acharacteristic feature is found in that the etching along the modifiedregion formed by the first step and the etching along the modifiedregion formed by the second step yield respective etching ratesdifferent from each other.

The line may extend along a (111) plane of the object. This forms amirror surface on the inner face of the hole by an angle of 35° withrespect to the thickness direction. The space may be a through holeopening to the front and rear faces of the object.

Advantageous Effects of Invention

The present invention can accurately form a object to be processed witha space tilted with respect to the thickness direction of the object.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic structural diagram of a laser processing deviceused for forming a modified region;

FIG. 2 is a plan view of an object to be processed in which the modifiedregion is to be formed;

FIG. 3 is a sectional view of the object taken along the line III-III ofFIG. 2;

FIG. 4 is a plan view of the object after laser processing;

FIG. 5 is a sectional view of the object taken along the line V-V ofFIG. 4;

FIG. 6 is a sectional view of the object taken along the line VI-VI ofFIG. 4;

FIG. 7 (a) is a sectional perspective view of the object for explainingthe laser processing method in accordance with a first embodiment, (b)is a sectional perspective view of the object illustrating a sequel toFIGS. 7( a), and (c) is a sectional perspective view of the objectillustrating a sequel to FIG. 7( b);

FIG. 8 (a) is a sectional view of the object illustrating a sequel toFIG. 7( c), while (b) is a sectional view of the object illustrating asequel to FIG. 8( a);

FIG. 9 (a) is a sectional perspective view of the object for explainingthe laser processing method in accordance with a second embodiment, (b)is a sectional perspective view of the object illustrating a sequel toFIGS. 9( a), and (c) is a sectional perspective view of the objectillustrating a sequel to FIG. 9( b);

FIG. 10 is a sectional view of the object for explaining the laserprocessing method in accordance with a third embodiment;

FIG. 11 is a sectional view of the object illustrating a sequel to FIG.10; and

FIG. 12 is a sectional view of the object illustrating a sequel to FIG.11.

DESCRIPTION OF EMBODIMENTS

In the following, preferred embodiments of the present invention will beexplained in detail with reference to the drawings. In the followingexplanation, the same or equivalent constituents will be referred towith the same signs while omitting their overlapping descriptions.

The laser processing method in accordance with an embodiment converges alaser light into an object to be processed, so as to form a modifiedregion. Therefore, the forming of the modified region will firstly beexplained in the following with reference to FIGS. 1 to 6.

As illustrated in FIG. 1, a laser processing device 100 comprises alaser light source 101 which causes a laser light L to oscillate in apulsating manner, a dichroic mirror 103 arranged such as to change thedirection of the optical axis (optical path) of the laser light L by90°, and a condenser lens 105 for converging the laser light L. Thelaser processing device 100 also comprises a support table 107 forsupporting an object to be processed 1 irradiated with the laser light Lconverged by the condenser lens 105, a stage 111 for moving the supporttable 107, a laser light source controller 102 for controlling the laserlight source 101 in order to regulate the output, pulse width, and thelike of the laser light L, and a stage controller 115 for controllingthe movement of the stage 111.

In the laser processing device 100, the laser light L emitted from thelaser light source 101 changes the direction of its optical axis by 90°with the dichroic mirror 103 and then is converged by the condenser lens105 into the object 1 mounted on the support table 107. At the sametime, the stage 111 is shifted, so that the object 1 moves relative tothe laser light L along a modified region forming line 5. This forms amodified region in the object 1 along the line 5.

As illustrated in FIG. 2, the line 5 is set in the object 1, for which asemiconductor material, a piezoelectric material, or the like is used.Here, the line 5 is a virtual line extending straight. When forming amodified region within the object 1, the laser light L is relativelymoved along the line 5 (i.e., in the direction of arrow A in FIG. 2)while locating a converging point P within the object 1 as illustratedin FIG. 3. This forms a modified region 7 within the object 1 along theline 5 as illustrated in FIGS. 4 to 6, whereby the modified region 7becomes a removing region 8 to be removed by etching which will beexplained later.

The converging point P is a position at which the laser light L isconverged. The line 5 may be curved instead of being straight, shapedinto a three-dimensional form combining them, or specified in terms ofcoordinates. The modified region 7 may be formed either continuously orintermittently. The modified region 7 may be formed like lines or dots.It will be sufficient if the modified region 7 is formed at least withinthe object 1. There are cases where fractures are formed from themodified region 7 acting as a start point, and the fractures andmodified region 7 may be exposed at outer surfaces (the front face, rearface, and side faces) of the object 1.

Here, the laser light L is absorbed in particular in the vicinity of theconverging point within the object 1 while being transmittedtherethrough, whereby the modified region 7 is formed in the object 1(i.e., internal absorption type laser processing). In the case offorming a removing part such as a hole or groove by melting it away fromthe front face 3 (surface absorption type laser processing), theprocessing region gradually progresses from the front face 3 side to therear face side in general.

The modified region 7 in accordance with this embodiment means regionswhose physical characteristics such as density, refractive index, andmechanical strength have attained states different from those of theirsurroundings. Examples of the modified region 7 include molten processedregions, crack regions, dielectric breakdown regions, refractive indexchanged regions, and their mixed regions. Further examples of themodified region 7 include an area where the density has changed fromthat of an unmodified region in a material of the object 1 and an areaformed with a lattice defect (which may collectively be referred to as ahigh-density transitional region).

The molten processed regions, refractive index changed regions, areaswhere the modified region has a density different from that of theunmodified region, or areas formed with a lattice defect may furtherincorporate a fracture (cut or microcrack) therewithin or at aninterface between the modified region 7 and an unmodified region. Theincorporated fracture may be formed over the whole surface of themodified region 7 or in only a part or a plurality of parts thereof.Examples of the object 1 include those containing or constituted bysilicon.

Here, this embodiment forms the modified region 7 in the object 1 andthen etches the object 1, so as to advance the etching selectively alongthe modified region 7 (i.e., along the modified region 7, fracturesincluded in the modified region 7, or fractures from the modified region7), thereby removing a part extending along the modified region 7 in theobject 1. These fractures are also known as cracks, microcracks,fractures, and the like (hereinafter simply referred to as “fractures”).

In the etching in this embodiment, for example, a capillary action orthe like is utilized so that fractures included in the modified region 7of the object 1 or fractures from the modified region 7 are impregnatedwith an etchant, so as to advance the etching along fracture surfaces.This advances the etching selectively at a higher etching rate (etchingspeed) along the fractures in the object 1 and removes them. Also, byutilizing the characteristic feature that the etching rate of themodified region 7 itself is high, the etching is selectively advancedalong the modified region 7, so as to remove it.

Examples of the etching include a case where the object 1 is immersed inthe etchant (dipping) and a case where the object 1 is coated with theetchant while being rotated (spin etching).

Examples of the etchant include KOH (potassium hydroxide), TMAH (aqueoustetramethylammonium hydroxide solution), EDP (ethylenediaminepyrocatechol), NaOH (sodium hydroxide), CsOH (cesium hydroxide), NH₄OH(ammonium hydroxide), and hydrazine. The etchant to be used is notlimited to liquids but may be in the form of a gel (jelly or semisolid).Here, the etchant is used at a temperature ranging from ambienttemperature to about 100° C., which is set appropriately according to arequired etching rate or the like. When etching the object 1 made ofsilicon with KOH, for example, the temperature is preferably about 60°C.

As the etching, this embodiment performs anisotropic etching which isetching having a higher (or lower) etching rate in a specific directionaccording to a crystal orientation. The anisotropic etching isapplicable not only to relatively thin objects but also to thick ones(having a thickness of 800 μm to 100 μm, for example). In this case,even when the surface to be formed with the modified region 7 differsfrom its plane direction, the etching can be advanced along the modifiedregion 7. That is, the anisotropic etching here enables not only theetching of the plane direction in conformity to the crystal orientation,but also the etching independent of the crystal orientation.

First Embodiment

The laser processing method in accordance with the first embodiment willnow be explained in detail. FIGS. 7 and 8 are flow diagrams forexplaining this embodiment. The laser light L is a pulsed laser light inthis embodiment.

This embodiment is a processing method used for manufacturing aphotomultiplier or interposer, for example. In particular, asillustrated in FIGS. 7 and 8, this embodiment converges a laser light Lat an object to be processed 1, so as to form a plurality of modifiedspots S within the object 1, while the plurality of modified spots Sconstitute a modified region 7. Thereafter, the part extending along themodified region 7 in the object 1 is removed by anisotropic etching, soas to form the object 1 with a through hole 24 as a tilted holeincluding a space extending obliquely with respect to the thicknessdirection of the object 1.

As illustrated in FIG. 8( b), the through hole 24 herein includesvertical parts 24 a, 24 a formed at respective end parts on the frontface 3 side and rear face 21 side of the object 1 and a tilted part(space) 24 b formed between the vertical parts 24 a, 24 a. Each verticalpart 24 a extends along the thickness direction. The tilted part 24 bextends in a direction (hereinafter referred to as “tilted direction”)tilted in the X direction with respect to the Z direction so as tofollow a (111) plane of the object 1 while being continuous with thevertical parts 24 a, 24 a. The tilted part 24 b forms an angle of 35°,for example, with the thickness direction (Z direction).

As depicted, the following explanation will assume the thicknessdirection of the object 1 (irradiation direction of the laser light L)to be the Z direction, the lateral direction to which the line 5(through hole 24) tilts with respect to the thickness direction to bethe X direction (first lateral direction), and the direction orthogonalto the X and Z directions to be the Y direction (second lateraldirection).

As illustrated in FIG. 7( a), the object 1 is a silicon substratetransparent to the wavelength (e.g., 1064 nm) of the laser light L withwhich it is irradiated and has a front face 3 and a rear face 21 whichare (100) planes. In the object 1, a modified region forming line 5 isprogrammably set as being specified by three-dimensional coordinates ata position corresponding to the through hole 24. Here, the line 5includes modified region forming lines 5 a extending along the thicknessdirection on the front face 3 side and rear face 21 side in the object 1and a modified region forming line 5 b extending between them whiletilting along the (111) plane of the object 1.

First, when processing the object 1 in this embodiment, the object 1 ismounted and held on the mount table with the front face 3 facing up.Subsequently, the object 1 is irradiated with the laser light L from thefront face 3 side in an on/off manner while locating a converging pointof the laser light L (hereinafter simply referred to as “convergingpoint”) on the rear face 21 side within the object 1 and moving theconverging point in the Y direction so as to form modified spots S alongthe line 5 a (Y-direction scan). This converges the laser light L ontothe rear face 21 side of the object 1, so as to form modified spots Sexposed to the rear face 21.

Here, the modified spots S each having a width of 10 μm in the Xdirection are formed. The modified spots S are formed while includingfractures generated therefrom (ditto in the following modified spots S).The converging point is scanned in the Y direction with a pitch (ofmodified spots S) of about 0.25 μm (i.e., laser irradiation is performedat intervals of 0.25 μm so as to form modified spots S by the numbercorresponding to that of laser irradiation operations) such that aplurality of modified spots S, each formed by a single laser irradiationoperation, partly overlap each other in the Y direction.

Subsequently, the converging point is moved by a predetermined amounttoward the front face 3 in the Z direction, and the above-mentionedY-direction scan is performed such as to form modified spots S along theline 5 a. This newly forms modified spots S on the front face 3 side ofthe existing modified spots S along the part corresponding to thevertical part 24 a on the rear face 21 side of the through hole 24, sothat the modified spots S or fractures therefrom are joined to eachother along the line 5.

Next, as illustrated in FIG. 7( b), the converging point is moved by apredetermined amount toward the front face 3 in the Z direction and by apredetermined amount in the X direction, and then the above-mentionedY-direction scan is performed. Specifically, the converging point ismoved by predetermined amounts ΔZ and ΔX in the Z and X directions,respectively, according to the following expression (1), and then theabove-mentioned Y-direction scan is performed so as to form modifiedspots S along the line 5 b. Thereafter, the movement of the convergingpoint and the Y-direction scan are repeated by the number of scans Nsprogressively from the rear face 21 side to the front face 3 side in theobject 1 according to the following expression (2):ΔZ=ΔX/tan θ  (1)Ns=T/ΔZ  (2)where ΔX=a predetermined value (e.g., 3 μm), θ=the angle formed by theline 5 and the Z direction, and T=the thickness of the tilted part 24 bin the Z direction.

This continuously forms a plurality of modified spots S such that themodified spots adjacent to each other partly overlap each other whenseen in the X direction. Specifically, a plurality of modified spots Sare formed like stairsteps along the line 5 b while being shifted in thethickness direction such that the modified spots S adjacent to eachother partly overlap each other when seen in the X direction, and themodified spots S or fractures from the modified spots S are joined toeach other along the line 5.

Next, as illustrated in FIG. 7( c), the converging point is moved by apredetermined amount toward the front face 3 in the Z direction, and theabove-mentioned Y-direction scan is performed such as to form modifiedspots S along the line 5 a. This newly forms modified spots S exposed tothe front face 3 while being continuous with the existing modified spotsS on the front face 3 side thereof, so that the modified spots S orfractures therefrom are joined to each other along the line 5. Theforegoing forms a plurality of modified spots S continuous with eachother in the part corresponding to the through hole 24 in the object 1,thereby producing a modified region 7A.

Afterward, the object 1 is anisotropically etched with KOH at 85° C.,for example, employed as an etchant. This lets the etchant proceed andinfiltrate from the front face 3 and rear face 21 into the modifiedregion 7 in the object 1 as illustrated in FIG. 8( a), so as to advance(develop) the etching along the modified region 7 from the front face 3side and rear face 21 side to the inside. As a result, the partextending along the modified region 7 in the object 1 is removed asillustrated in FIG. 8( b), whereby the forming of the through hole 24 iscompleted.

Here, by utilizing the characteristic feature that the etching ratedepends on the crystal orientation of the object 1, the selectiveadvancement of etching along the modified region can favorably becontrolled in the anisotropic etching for the object 1. That is, in the(111) plane in the object 1, the etching rate is much lower than in theother parts, whereby the etch stops. Hence, in the modified region 7extending along the (111) plane (i.e., the modified region 7corresponding to the tilted part 24 b), etching advances selectively ata high speed in particular along the extending direction, while theinner face of the resulting tilted part 24 b is devoid of its cornersand becomes smoother, so that a mirror surface is formed on the innerface.

Here, in the modified region 7 extending along the line 5 b, themodified spots S, S adjacent to each other at least partly overlap eachother when seen in the X direction as mentioned above, whereby themodified spots S or fractures therefrom can favorably be joined to eachother along the line 5 b. Therefore, the selective etching of themodified region 7 can favorably be advanced without interruption evenwhen proceeding in the tilted direction.

In particular, in the modified region 7 extending along the line 5 b inthis embodiment, a plurality of modified spots S are formed while beingshifted in the thickness direction such that the modified spots Sadjacent to each other partly overlap each other when seen in the Xdirection as mentioned above, whereby the modified spots S or fracturestherefrom densely join with each other along the line 5 b, for example,so that the etchant infiltrates and proceeds between the modified spotsS, S without retention, thereby advancing the etching reliably at a highspeed in the tilted direction without interruption.

Therefore, this embodiment can accurately remove the part correspondingto the through hole 24 in the object 1, whereby the through hole 24 canbe formed precisely in the object 1. Also, the through hole 24 havingdesirable angle and length can be formed easily, whereby the degree offreedom in processing the object 1 can be improved.

As mentioned above, the line 5 b extends along the (111) plane of theobject, while the modified spots S in the part corresponding to thetilted part 24 b of the through hole 24 in the object 1 are formed alongthe (111) plane of the object. This can form a mirror surface, which isa smooth surface with less depressions and projections, on the innerface of the tilted part 24 b and allows the tilted part 24 b to have arectangular (diamond-shaped) cross section.

Though this embodiment exposes the modified spots S to the front face 3and rear face 21, fractures from the modified spots S may be exposedinstead of the modified spots S. Exposing the modifies spots S to thefront face 3 and rear face 21 can increase the aperture ratio of theresulting through hole 24, so as to enhance the efficiency in collectingelectrons when employing this embodiment in a photomultiplier, forexample. On the other hand, exposing fractures instead of the modifiedspots S can restrain the through hole 24 from increasing its size on theopening side, whereby the pore size of the through hole 24 on theopening side can be the same as that on the inside thereof.

The number of modified spots S formed in the object 1, i.e., the numberof operations of irradiation with the laser light L (shots), is notlimited to that in this embodiment, but may be set as appropriateaccording to the form (such as the pore size, length, and angle withrespect to the Z direction) of the through hole 24.

Second Embodiment

The second embodiment will now be explained. This embodiment will mainlybe explained in terms of differences from the above-mentioned firstembodiment. The laser light L is a pulsed laser light as in theabove-mentioned first embodiment.

FIG. 9 is a flow diagram for explaining this embodiment. First, asillustrated in FIG. 9( a), this embodiment irradiates the object 1 withthe laser light L in an on/off manner from the front face 3 side, whilelocating the converging point on the rear face 21 side of the object 1and moving the converging point along the X direction such as to formmodified spots S on the line 5 a (X-direction scan). This forms two ormore modified spots S continuously aligning along the X direction as amodified spot group 10 exposed to the rear face 21 on the rear face 21side of the object 1.

In the modified spot group 10 herein, the interval between the modifiedspots S aligning in a row is 0.25 μm, while the modified spots S partlyoverlap each other in the X direction (ditto in the following).Specifically, the converging point is scanned in the X direction with apitch (of modified spots S) of about 0.25 μm (i.e., laser irradiation isperformed at intervals of 0.25 μm so as to form modified spots S by thenumber corresponding to that of laser irradiation operations), wherebythe modified spot group 10 is formed such that the modified spots S,each formed by a single laser irradiation operation, partly overlap eachother in the X direction.

Subsequently, the converging point is moved by a predetermined amounttoward the front face 3 in the Z direction, and the above-mentionedX-direction scan is performed such as to form a modified spot group 10along the line 5 a. This newly forms a modified spot group 10 on thefront face 3 side of the existing modified spot group 10 along the partcorresponding to the vertical part 24 a on the rear face 21 side of thethrough hole 24, so that the modified spots S or fractures therefrom arejoined to each other along the line 5.

Next, as illustrated in FIG. 9( b), the converging point is moved towardthe front face 3 in the Z direction, and the above-mentioned X-directionscan is performed such that a modified spot group 10 is formed along theline 5 b. Then, the movement of the converging point in the Z directionand the X-direction scan are repeatedly performed a plurality of timesprogressively from the rear face 21 side to the front face 3 side in theobject 1. This forms a plurality of modified spot groups 10 along thepart corresponding to the tilted part 24 b of the through hole 24.Specifically, a plurality of modified spot groups 10 are formed alongthe line 5 b while being shifted in the X direction such that a pair ofmodified spot groups 10, 10 adjacent to each other partly overlap eachother when seen in the Z direction, so that the modified spots S orfractures therefrom are joined to each other along the line 5.

At this time, for favorably performing anisotropic etching in a laterstage, the overlap between the adjacent modified spot groups 10 whenseen in the Z direction is set according to the pore size of the tiltedpart 24 b to be formed and the angle of the tilted part 24 b (line 5 b)with respect to the Z direction. Here, the adjacent modified spot groups10 are formed such as to overlap each other by about 8 to 10 μm in the Xdirection.

Subsequently, as illustrated in FIG. 9( c), the converging point ismoved toward the front face 3 in the Z direction, and theabove-mentioned scan in the X direction is performed such as to formmodified spots S along the line 5 a. This newly forms a modified spotgroup 10 exposed to the front face 3 on the front face side of theexisting modified spot group 10 along the part corresponding to thevertical part 24 a on the front face 3 side, so that the modified spotsS or fractures therefrom are joined to each other along the line 5. Theforegoing forms the modified spot groups 10, each comprising a pluralityof modified spots S, continuous with each other in the partcorresponding to the through hole 24 of the object 1, thereby producinga modified region 7B.

As in the foregoing, this embodiment is also effective in accuratelyremoving the part corresponding to the through hole 24 in the object 1and precisely forming the through hole 24 in the object 1, which issimilar to the effect mentioned above.

As mentioned above, this embodiment forms a plurality of modified spotgroups 10 along the line 5 b while shifting them in the X direction suchthat a pair of modified spot groups 10 adjacent to each other partlyoverlap each other when seen in the X direction. Therefore, in themodified region 7 extending along the line 5 b, for example, themodified spots S and fractures densely join with each other along theline 5 b, so that the etchant infiltrates and proceeds without retentioneven when selective etching advances in the tilted direction. Hence, theselective etching advances reliably at a high speed in the tilteddirection without interruption. As a result, the part corresponding tothe tilted part 24 b of the through hole 24 can be removed accurately,whereby the through hole 24 can be formed precisely.

As mentioned above, this embodiment forms the modified region 7B byperforming the X-direction scan, i.e., irradiation with the laser lightL with its converging point L moving along the X-direction, and thus cansuppress wasted movement of the converging point of the laser light L(the number of scans), so as to enable faster processing, therebyimproving the takt time. Also, the modified region 7B can be formed bythe same number of scans without depending on the length of the throughhole 24 and its angle with respect to the thickness direction.

The width of each modified spot group 10 in the X direction and thenumber of modified spots S therein (i.e., the number of operations ofirradiation with the laser light L) are not limited, but can be set asappropriate according to the form of the through hole 24. This will alsohold in the following embodiments.

Third Embodiment

The third embodiment will now be explained. This embodiment will mainlybe explained in terms of differences from the above-mentioned firstembodiment. The laser light L is a pulsed laser light as in theabove-mentioned first embodiment.

FIGS. 10 to 12 are flow diagrams for explaining this embodiment. Asillustrated in FIG. 12, this embodiment forms the object 1 with aplurality of through holes (spaces) 241 to 244 extending obliquely withrespect to the Z direction. The through holes 241 to 244 tilt more withrespect to the Z direction and extend longer in this order.

As illustrated in FIG. 10, this embodiment performs the Y-direction scanin the first embodiment and the X-direction scan in the secondembodiment as appropriate according to the respective lengths by whichthe through holes 241 to 244 extend as follows, so as to form modifiedregions 7. That is, as illustrated in FIGS. 10 and 12, the Z-directionmovement of the converging point and the Y-direction scan are repeatedlyperformed a plurality of times, so as to form a modified region 71extending along the part corresponding to the through hole 241, modifiedregions 72A, 72A extending along the parts corresponding to therespective end parts on the front face 3 side and rear face 21 side ofthe through hole 242, and modified regions 73A, 73A extending along theparts corresponding to the respective vicinities of the front face 3 andrear face 21 of the through hole 243.

In each of the modified regions 71, 72A, 73A, a plurality of modifiedspots S are formed while being shifted in the thickness direction suchthat the modified spots S adjacent to each other partly overlap eachother when seen in the X direction. Here, the modified region 72Aextends longer than the modified region 73A.

Also, the Z-direction movement of the converging point and theX-direction scan are repeatedly performed a plurality of times, so as toform a modified region 72B extending along the part corresponding to thecenter part of the through hole 242 in the Z direction, a modifiedregion 73B extending along the part corresponding to the space betweenthe respective vicinities of the front face 3 and rear face 21 of thethrough hole 243, and a modified region 74 extending along the partcorresponding to the though hole 244.

In each of the modified regions 72B, 73B, 74, a plurality of modifiedspot groups 10 are formed while being shifted in the X-direction suchthat the modified spot groups 10, 10 adjacent to each other partlyoverlap each other when seen in the Z direction. Here, the modifiedregion 73B extends longer than the modified region 72B.

Next, as illustrated in FIGS. 11 and 12, the object 1 is anisotropicallyetched, so that the etchant proceeds and infiltrates from the front face3 and rear face 21 into the modified regions 7 in the object 1, therebyselectively advancing the etching along the modified regions 7.

Here, a characteristic feature is found in that the etching along themodified regions 71, 72A, 73A formed by the Y-direction scan and theetching along the modified regions 72B, 73B, 74 formed by theX-direction scan yield respective etching rates different from eachother. Specifically, as the characteristic feature, it is found that theetching rate in the etching along the modified regions 72B, 73B, 74 ishigher than that in the etching along the modified regions 71, 72A, 73Adepending on how the modified spots S or fractures join with each otherand so forth, for example.

Hence, as illustrated in FIG. 11, in the anisotropic etching in thisembodiment, the etching advances faster along the modified regions 72B,73B, 74 than along the modified regions 71, 72A, 73A. That is, theetching advances such that the through holes 241 to 244 are formed athigher etching rate as their extending length is longer. This adjuststhe time required for completing the etching (i.e., boring the throughholes 241 to 244), so as to finish forming the through holes 241 to 244substantially at the same time such that they have the same pore size asillustrated in FIG. 12.

As in the foregoing, this embodiment is also effective in accuratelyremoving the parts corresponding to the through holes 241 to 244 in theobject 1 and precisely forming the through holes 241 to 244 in theobject 1, which is similar to the effect mentioned above.

In general, a plurality of through holes 241 to 244 extending by lengthsdifferent from each other require different times for completing etchingand thus are hard to attain the same pore size. In this regard, thisembodiment performs laser processing combining the X-direction scan andY-direction scan as mentioned above, so as to form the modified regions72B, 73B, 74 with higher etching rates and the modified regions 71, 72A,73A with lower etching rates for their corresponding through holes 241to 244. This can adjust the times required for completing etching in thethrough holes 241 to 244, thereby controlling their pore sizes asdesired.

In particular, as mentioned above, this embodiment forms the modifiedregions 7 with higher etching rates larger (the modified regions 7 withlower etching rates smaller) in parts corresponding to the through holes241 to 244 extending longer, so that they require the same time forcompleting the etching. This can make the through holes 241 to 244 havethe same pore size.

Though preferred embodiments of the present invention have beenexplained in the foregoing, the present invention is not limited theretobut may be modified or applied to others within the scope not changingthe gist recited in each claim.

For example, the laser light entrance surface for forming the modifiedregions 7 is not limited to the front face 3 of the object 1, but may bethe rear face 21 of the object 1. Though the above-mentioned embodimentsform the through holes 24 in the object 1, blind holes opening to thefront face 3 or rear face 21 alone may be formed instead. Channels andslits may be formed as well. It will be sufficient if a space extendingin a direction tilted with respect to the Z direction is formed. Theabove-mentioned embodiments can produce through holes 24 having variousforms of cross sections such as circular, elliptical, and polygonalforms.

Though the above-mentioned embodiment tilts the tilted part 24 b of thethrough hole by 35° (the azimuth angle of the (111) plane) with respectto the Z direction, the tilted angle is not limited thereto, but may be10° or 45°. In this case, multiple steps (staircase structure) can beformed on the inner face of the tilted part 24 b.

Since doping the etchant with additives can change the etching rate in aspecific crystal orientation, the etchant may be doped with an additivecorresponding to the crystal orientation of the object 1 in order toperform anisotropic etching at a desirable etching rate.

INDUSTRIAL APPLICABILITY

The present invention can accurately form an object to be processed witha space extending in a direction tilted with respect to the thicknessdirection of the object.

REFERENCE SIGNS LIST

1 . . . object; 3 . . . front face; 5 b . . . modified region formingline; 7, 7A, 7B, 71, 72A, 72B, 73A, 73B, 74 . . . modified region; 10 .. . modified spot group; 21 . . . rear face; 24 b . . . tilted part(space) of a through hole; 241 to 244 . . . through hole (space); L . .. laser light; S . . . modified spot

The invention claimed is:
 1. A laser processing method comprising: amodified region forming step of converging a laser light at a sheet-likeobject to be processed made of silicon so as to form a plurality ofmodified spots within the object along a modified region forming linetilted in a first lateral direction as compared to a thickness directionof the object, the modified region forming step including, (i)irradiating the object with the laser light while moving the laser lightalong a second lateral direction to form a plurality of modified spotsalong the second lateral direction, the second lateral direction beingperpendicular to the first lateral direction, the plurality of modifiedspots overlapping each other in the second lateral direction to form agroup of overlapping modified spots that extends in the second lateraldirection, (ii) moving a converging point of the laser light along thefirst lateral direction and the thickness direction, and (iii) repeatingsteps (i) and (ii) so as to form a plurality of groups of overlappingmodified spots along the modified region forming line, each group ofoverlapping modified spots also partially overlapping each other whenviewed from the first lateral direction, and the plurality of groups ofoverlapping modified spots defining a modified region; and an etchingstep of anisotropically etching the object after the modified regionforming step so as to advance the etching selectively along the modifiedregion and form the object with a space extending obliquely as comparedto the thickness direction.
 2. A laser processing method according toclaim 1, wherein the line extends along a (111) plane of the object. 3.A laser processing method according to claim 1, wherein the space is athrough hole opening to the front and rear faces of the object.
 4. Alaser processing method according to claim 1, wherein the step (iii) isperformed such that each group of overlapping modified spots do notoverlap with each other when viewed from the second lateral direction.5. A laser processing method according to claim 1, wherein the step (i)is formed such that the group of overlapping modified spots forms acontiguous structure.
 6. A laser processing method comprising: amodified region forming step of converging a laser light at a sheet-likeobject to be processed made of silicon so as to form a plurality ofmodified spots within the object along a modified region forming linetilted in a first lateral direction as compared to a thickness directionof the object, the modified region forming step including, (i)irradiating the object with the laser light while moving the laser lightalong the first lateral direction to form a plurality of modified spotsalong the first lateral direction, the plurality of modified spotsoverlapping each other in the first lateral direction to form a group ofoverlapping modified spots that extends in the first lateral direction,(ii) moving a converging point of the laser light along the firstlateral direction and the thickness direction, and (iii) repeating steps(i) and (ii) so as to form a plurality of groups of overlapping modifiedspots along the modified region forming line, each of the groups ofoverlapping modified spots also partially overlapping each other whenviewed form the thickness direction, the plurality of groups ofoverlapping modified spots defining a modified region; and an etchingstep of anisotropically etching the object after the modified regionforming step so as to advance the etching selectively along the modifiedregion and form the object with a space extending obliquely as comparedto the thickness direction.
 7. A laser processing method according toclaim 6, wherein the line extends along a (111) plane of the object. 8.A laser processing method according to claim 6, wherein the space is athrough hole opening to the front and rear faces of the object.
 9. Alaser processing method according to claim 6, wherein the step (i) isformed such that the group of overlapping modified spots forms acontiguous structure.